EU FP6 Projects on Memory Technologies
This project will investigate the feasibility of emerging of new non-volatile memory concepts based on resistive-switching materials for enabling new mass-storage memory systems. These new memory concepts allow integration of the memory element in contact and interconnect structures resulting in very small memory cells and even offer the possibility of 3-D memory layer stacking. These new memory solutions are needed for the sub-32nm integration technology nodes where current memory concepts will no longer scale
Abstract
The program will study high-density resistive switching non-volatile memories including binary resistive switching oxides and CuTCNQ. Focus will be on concept scalability, based on gained undersanding of the physical operation concepts. Investigation will further include cell integration aspects reliability assessment, and memory architectures.
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Coordinator: INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW, Belgium |
Partners:POLITECHICO DI MILANO, Italy; CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, France; rHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN, Germany; ALMA MATER STUDIORUM UNIVERSITA DI BOLOGNA, Italy; STMICROELECTRONICS S.R.L., Italy; UNIVERSITA DEGLI STUDI DI MODENA E REGGIO EMILIA, Italy;CONSORZIO NAZIONNALE INTERUNIVERSITARIO PER LA NANOELETTRONICA, Italy; CONSIGLIO NAZIONALE DELLE RICERCHE, Italy; UNIVERSITA DEGLI STUDI DI PADOVA, Italy. |